IRF7303QPBF_10 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPOWERMOSET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET^® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
PD - 96103A
IRF7303QPbF
HEXFET^® Power MOSFET
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
V_DSS = 30V
6
D2
5 _{D2 RDS(on) = 0.050Ω}
Top View
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
10 Sec. Pulsed Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
R_θJA
Maximum Junction-to-Ambient„
www.irf.com
Max.
5.3
4.9
3.9
20
2.0
0.016
± 20
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
1
08/02/10