IRF7241PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Trench Technology

● Trench Technology
● Ultra Low On-Resistance
● P-Channel MOSFET
● Available in Tape & Reel
● Lead-Free
V_DSS
-40V
PD - 95294
IRF7241PbF
HEXFET^® Power MOSFET
R_DS(on) max (mW)
41@V_GS = -10V
70@V_GS = -4.5V
I_D
-6.2A
-5.0A
Description
S
1
A
8
D
New trench HEXFET^® Power MOSFETs from S ²
7
D
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance ^{S 3}
6
D
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
G
4
5
D
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
Top View
in battery and load management applications.
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_θJL
R_θJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
-40
-6.2
-4.9
-25
2.5
1.6
20
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
10/6/04