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| IRF7240TRPBF Datasheet, PDF (1/9 Pages) International Rectifier – Ultra Low On-Resistance | |||
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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
VDSS
-40V
PD- 95253
IRF7240PbF
HEXFET® Power MOSFET
RDS(on) max
0.015@VGS = -10V
0.025@VGS = -4.5V
ID
-10.5A
-8.4A
Description
S
1
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to S 2
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
S
3
extremely efficient device for use in battery and load G 4
management applications..
A
8
D
7
D
6
D
5
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current Â
Power Dissipation Â
Power DissipationÂ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-40
-10.5
-8.6
-43
2.5
1.6
20
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-AmbientÂ
Max.
50
Units
°C/W
1
06/06/05
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