IRF7210 Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET Power MOSFET

PD- 91844B
IRF7210
l Ultra Low On-Resistance
l P-Channel MOSFET
S
l Surface Mount
S
l Available in Tape & Reel
S
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
HEXFET^® Power MOSFET
A
1
8
D
2
7
D
V_DSS = -12V
3
6
D
4
5 _{D RDS(on) = 0.007Ω}
Top View
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
V_GSM
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-12
±16
±12
±100
2.5
1.6
0.02
± 12
16
-55 to + 150
Max.
50
Units
V
A
W
W/°C
V
V
°C
Units
°C/W
1
10/19/04