IRF7201PBF Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET® Power MOSFET

PD- 95022
IRF7201PbF
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
S
l Surface Mount
S
l Available in Tape & Reel
l Dynamic dv/dt Rating
S
l Fast Switching
G
l Lead-Free
Description
Fifth Generation HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
HEXFET^® Power MOSFET
AA
1
8
D
2
7
D
V_DSS = 30V
3
6
D
4
5 _{D RDS(on) = 0.030Ω}
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
V_DS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 70°C
V_GS
V_GSM
E_AS
dv/dt
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
SO-8
Max.
30
7.3
5.8
58
2.5
1.6
0.02
± 20
30
70
5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
mJ
V/ns
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient…
Typ.
–––
Max.
50
Units
°C/W
1
9/30/04