IRF7171MPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Optimized for Synchronous Rectification

FastIRFET™
IRF7171MTRPbF
Applications and Benefits
Ideal for High Performance Isolated Converter
Primary Switch
Optimized for Synchronous Rectification
RoHS Compliant, Halogen Free 
Lead-Free (Qualified up to 260°C Reflow) 
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
Industrial Qualified
DirectFET^® Power MOSFET
Typical values (unless otherwise specified)
V_DSS
100V min
V_GS
±20V max
R_DS(on)
5.3m@ 10V
Q_{g tot}
Q_gd
V_gs(th)
36nC
13nC
2.9V
D
G
S
D
S
Applicable DirectFET^® Outline and Substrate Outline 
DirectFET™ ISOMETRIC
MN
MN
Description
The IRF7171MTRPbF combines the latest HEXFET^® Power MOSFET Silicon technology with the advanced DirectFET^® packaging
to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET^® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET^® package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7171MTRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for
system reliability improvements, and makes this device ideal for high performance power converters.
Ordering Information
Base part number
IRF7171MTRPbF
Package Type
DirectFET^® Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF7171MTRPbF
Absolute Maximum Ratings
Parameter
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_DM
E_AS
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Pulsed Drain Current
Single Pulse Avalanche Energy 
I_AR
Avalanche Current 
Max.
±20
93
59
15
330
86
56
Units
V
A
mJ
A
18.0
ID = 56A
15.0
12.0
9.0
TJ = 125°C
6.0
TJ = 25°C
40
VGS = 6V
VGS = 7V
30
VGS = 8V
VGS = 10V
VGS = 12V
20
10
3.0
4
6
8
10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes
 Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET^® Website.
 Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2015 International Rectifier
0
0
25 50 75 100 125 150 175 200
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
 TC measured with thermocouple mounted to top (Drain) of part.
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting T_J = 25°C, L = 55µH, R_G = 50, I_AS = 56A.
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March 25, 2015