IRF7106 Datasheet, PDF (1/7 Pages) International Rectifier – Power MOSFET(Vdss=+-20V)

PRELIMINARY
HEXFET^® Power MOSFET
PD - 9.1098B
IRF7106
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
N-CHANNEL MOSFET
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
Description
Top View
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design for which HEXFET Power MOSFETs are well known, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
N-Ch P-Ch
V_DSS 20V -20V
R_DS(on) 0.125Ω 0.20Ω
I_D 3.0A -2.5A
SO-8
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J, T_STG
Continuous Drain Current, V _GS @ 10V
Continuous Drain Current, V _GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
Parameter
Junction-to-Ambient (PCB Mount)**
Max.
N-Channel
P-Channel
3.0
-2.5
2.5
-2.0
10
-10
2.0
0.016
± 20
3.0
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Min.
––––
Typ.
––––
Max.
62.5
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
69
Revision 3