IRF7105QTRPBF Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

END OF LIFE
PD - 96102B
IRF7105QPbF
l Advanced Process Technology
l Ultra Low On-Resistance
S1
l Dual N and P Channel MOSFET
G1
l Surface Mount
S2
l Available in Tape & Reel
l 150°C Operating Temperature
G2
l Lead-Free
Description
These HEXFET^® Power MOSFET's in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
1
8
2
7
3
6
4
5
P-CHANNEL MOSFET
Top View
D1
N-Ch P-Ch
D1 _VDSS
D2
D2 ^RDS(on)
25V -25V
0.10Ω 0.25Ω
I_D
3.5A -2.3A
SO-8
Base part number Orderable part number
Package
Type
IRF7105QPbF
IRF7105QTRPbF
IRF7105QPbF
SO-8
SO-8
Standard Pack
Form
Quantity
Tape and Reel 4000
Tube
95
EOL Notice
EOL 527
EOL 529
Replacement Part Number
Please search the EOL part number on IR’s
website for guidance
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
R_θJA
Maximum Junction-to-Ambient „
www.irf.com
Max.
N-Channel
P-Channel
3.5
-2.3
2.8
-1.8
14
-10
2.0
0.016
± 20
3.0
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
1
05/20/14