IRF7105QPBF_10 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFETPOWERMOSFET

PD - 96102A
IRF7105QPbF
HEXFET^® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
N-CHANNEL MOSFET
S1
1
8
D1
N-Ch P-Ch
G1
2
S2
3
7
D1 _VDSS
6
D2
25V -25V
G2
4
5 _{D2 RDS(on) 0.10Ω 0.25Ω}
P-CHANNEL MOSFET
Top View
I_D
3.5A -2.3A
Description
These HEXFET^® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
R_θJA
Maximum Junction-to-Ambient „
www.irf.com
Max.
N-Channel
P-Channel
3.5
-2.3
2.8
-1.8
14
-10
2.0
0.016
± 20
3.0
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
1
08/02/10