IRF7105PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel Mosfet
S1
l Surface Mount
G1
l Available in Tape & Reel
l Dynamic dv/dt Rating
S2
l Fast Switching
G2
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
PD - 95164
IRF7105PbF
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
1
8
2
7
3
6
4
5
P-CHANNEL MOSFET
Top View
D1
N-Ch P-Ch
D1
V_DSS
D2
25V -25V
D2 RDS(on) 0.10Ω 0.25Ω
I_D
3.5A -2.3A
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
3.5
-2.3
2.8
-1.8
14
-10
2.0
0.016
± 20
3.0
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
1
10/6/04