IRF7104 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

l Adavanced Process Technology
l Ultra Low On-Resistance
S1
l Dual P-Channel MOSFET
G1
l Surface Mount
l Available in Tape & Reel
S2
l Dynamic dv/dt Rating
G2
l Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
PD - 9.1096B
IRF7104
HEXFET^® Power MOSFET
1
8
D1
V_DSS = -20V
2
7
D1
3
6
4
5
Top View
D 2 _{RDS(on) = 0.250Ω}
D2
I_D = -2.3A
S O -8
Absolute Maximum Ratings
ID @ TA = 25°C
I_D @ T_A = 70°C
IDM
P_D @T_C = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-2.3
-1.8
-10
2.0
0.016
± 12
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max. Units
62.5
°C/W
8/25/97