IRF7103QTRPBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 96101C
IRF7103QPbF
Benefits
l Advanced Process Technology
l Dual N-Channel MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET^® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
V_DSS
50V
HEXFET^® Power MOSFET
R_DS(on) max (mW)
130@V_GS = 10V
200@V_GS = 4.5V
I_D
3.0A
1.5A
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
SO-8
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Absolute Maximum Ratings
Parameter
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
Continuous Drain Current, V_GS @ 4.5V
c ^{Continuous Drain Current, VGS @ 4.5V}
Pulsed Drain Current
e Power Dissipation
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Linear Derating Factor
f ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy
c Avalanche Current
h Repetitive Avalanche Energy
g Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig. 16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R_θJL
Junction-to-Drain Lead
R_θJA
fg Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
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1
08/02/10