IRF7103Q Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=50V)

PD - 93944C
AUTOMOTIVE MOSFET
IRF7103Q
Typical Applications
q Anti-lock Braking Systems (ABS)
q Electronic Fuel Injection
q Power Doors, Windows & Seats
Benefits
q Advanced Process Technology
q Dual N-Channel MOSFET
q Ultra Low On-Resistance
q 175°C Operating Temperature
q Repetitive Avalanche Allowed up to Tjmax
q Automotive [Q101] Qualified
Description
Specifically designed for Automotive applications, these
HEXFET^® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
V_DSS
50V
HEXFET^® Power MOSFET
R_DS(on) max (mΩ)
130@V_GS = 10V
200@V_GS = 4.5V
I_D
3.0A
1.5A
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
SO-8
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current Q
Power DissipationS
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche EnergyT
Avalanche CurrentQ
Repetitive Avalanche EnergyV
Peak Diode Recovery dv/dt U
T_J, T_STG
Junction and Storage Temperature Range
Thermal Resistance
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig.16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Symbol
R_θJL
R_θJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient S
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
03/14/02