IRF7103IPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
PD -96085
IRF7103IPbF
HEXFET^® Power MOSFET
S1
1
G1
2
8
D1
7
D1
V_DSS = 50V
S2
3
G2
4
6 _{D2 RDS(on) = 0.130Ω}
5
D2
Top View
I_D = 3.0A
Description
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
R_θJA
Maximum Junction-to-Ambient „
Max.
3.0
2.3
10
2.0
0.016
± 20
4.5
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
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1
07/07/06