IRF7101 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD - 9.871B
IRF7101
HEXFET^® Power MOSFET
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
1
S1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
V_DSS = 20V
R_DS(on) = 0.10Ω
I_D = 3.5A
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
ID @ TA = 25°C
I_D @ T_A = 100°C
IDM
P_D @T_C = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt‚
Junction and Storage Temperature Range
Sodering Temperature, for 10 seconds
Max.
3.5
2.3
14
2.0
0.016
± 12
3.0
-55 to + 150
300(1.6mm from case)
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
R_θJA
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max Units
62.5 °C/W
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