IRF6893MPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – RoHs Compliant Containing No Lead and Bromide

PD - 97761
IRF6893MPbF
IRF6893MTRPbF
DirectFET^®plus MOSFET with Schottky Diode ‚
l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified)
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Low Package Inductance
l Optimized for High Frequency Switching 
V_DSS
V_GS
R_DS(on)
R_DS(on)
25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
25nC 8.5nC 2.5nC 36nC 29nC 1.6V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
l Footprint compatible to DirectFET™
MX
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6893MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6893MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
V_GS
I_D @ TA = 25°C
I_D @ TA = 70°C
I_D @ TC = 25°C
I_DM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
25
V
±16
29
23
A
168
230
370
mJ
23
A
5
ID = 29A
4
3
TJ = 125°C
2
1
TJ = 25°C
0
0 2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0 ^{ID= 23A}
10.0
8.0
VDS= 20V
VDS= 13V
VDS= 5.0V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 1.4mH, R_G = 50, I_AS = 23A.
1
02/22/12