IRF6892SPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – RoHS Compliant and Halogen Free

PD - 97770
IRF6892STRPbF
IRF6892STR1PbF
DirectFET^®plus MOSFET with Schottky Diode ‚
l RoHS Compliant and Halogen Free 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
l Ultra Low Package Inductance
25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques 
17nC 6.0nC 2.3nC 39nC 16nC 1.8V
l 100% Rg tested
G
S
D
S
D
S
Applicable DirectFET Outline and Substrate Outline 
S3C
ISOMETRIC
S1
S2
S3C
M2
M4
L4
L6
L8
Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6892SPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
25
V
±16
28
22
A
125
220
240
mJ
22
A
8.0
14.0
6.0
ID = 28A
12.0 ^{ID= 22A}
10.0
VDS= 20V
VDS= 13V
VDS= 5V
4.0
8.0
6.0
2.0
TJ = 125°C
4.0
0.0
2
TJ = 25°C
4
6
8
10 12 14 16
2.0
0.0
0
10
20
30
40
50
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 1.2mH, R_G = 25Ω, I_AS = 22A.
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