IRF6798MPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET plus Schottky Diode

PD - 97433B
IRF6798MPbF
IRF6798MTRPbF
HEXFET^® Power MOSFET plus Schottky Diode ‚
l RoHs Compliant Containing No Lead and Bromide 
l Integrated Monolithic Schottky Diode
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
l Low Profile (<0.7 mm)
25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V
l Dual Sided Cooling Compatible 
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
l Low Package Inductance
50nC 16nC 6.8nC 64nC 38nC 1.8V
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6798MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6798MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
Max.
25
±20
37
30
197
300
220
30
Units
V
A
mJ
A
5
14.0
4
ID = 37A
12.0 ^{ID= 30A} VDS= 20V
10.0
VDS= 13V
3
8.0
2
TJ = 125°C
1
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
4.0
2.0
0.0
0
25
50
75 100 125 150
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.50mH, R_G = 25Ω, I_AS = 30A.
1
12/10/09