IRF6797MPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET plus Schottky Diode

PD - 97320A
IRF6797MPbF
IRF6797MTRPbF
HEXFET^® Power MOSFET plus Schottky Diode ‚
l RoHs Compliant Containing No Lead and Bromide 
l Integrated Monolithic Schottky Diode
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
l Low Profile (<0.7 mm)
25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
Q_{g tot}
45nC
Q_gd
13nC
Q_gs2
6.2nC
Q_rr
38nC
Q_oss V_gs(th)
38nC 1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6797MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6797MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
25
V
±20
36
29
A
210
300
260
mJ
30
A
4
14.0
3
ID = 36A
12.0 ^{ID= 30A}
10.0
VDS= 20V
VDS= 13V
8.0
2
TJ = 125°C
6.0
1
TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
4.0
2.0
0.0
0
20
40
60
80 100 120
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.57mH, R_G = 25Ω, I_AS = 30A.
1
03/16/09