IRF6775MTRPBF Datasheet, PDF (1/10 Pages) International Rectifier – DIGITAL AUDIO MOSFET

PD - 97117
IRF6775MTRPbF ^{DIGITAL AUDIO MOSFET}
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low R_DS(on) for improved efficiency
• Low Q_g for better THD and improved efficiency
• Low Q_rr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 250W per channel into 4Ω Load in
Key Parameters
V_DS
150
V
R_DS(on) typ. @ V_GS = 10V 47
m:
Q_g typ.
25.0 nC
R_G(int) max.
3.0
Half-Bridge Configuration Amplifier
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
'*
6
6
'
MZ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6775MPbF device utilizes DirectFET^TM packaging technology. DirectFET^TM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET^TM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFET^TM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 70°C
I_DM
Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
P_D @T_C = 25°C
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
I_AR
Maximum Power Dissipation
e Power Dissipation
e Power Dissipation
d Single Pulse Avalanche Energy
Ù Avalanche Current
e Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
Parameter
ek Junction-to-Ambient
hk Junction-to-Ambient
ik Junction-to-Ambient
jk Junction-to-Case
Junction-to-PCB Mounted
Max.
150
± 20
28
4.9
3.9
39
89
2.8
1.8
33
5.6
0.022
-40 to + 150
Typ.
–––
12.5
20
–––
1.4
Max.
45
–––
–––
1.4
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
Notes  through ‰ are on page 2
www.irf.com
1
4/17/07