IRF6724MPBF Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET

PD -97131A
IRF6724MPbF
IRF6724MTRPbF
l RoHs Compliant and Halogen Free 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
Q_{g tot}
33nC
Q_gd
10nC
Q_gs2
3.9nC
Q_rr
34nC
Q_oss V_gs(th)
20nC 1.8V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6724MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6724MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6724MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
8
ID = 27A
6
12
ID= 21A
10
8
Max.
30
±20
27
21
150
212
12
21
VDS= 24V
VDS= 15V
Units
V
A
mJ
A
4
TJ = 125°C
6
4
2
TJ = 25°C
2
0
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.051mH, R_G = 25Ω, I_AS = 21A.
1
04/30/09