IRF6718L2PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – RoHS Compliant Containing No Lead and Bromide

PD - 97395E
IRF6718L2TRPbF
l RoHS Compliant Containing No Lead and Bromide 
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Very Low R_DS(ON) for Reduced Conduction Losses
l Optimized for Active O-Ring / Efuse Applications
l Compatible with existing Surface Mount Techniques 
IRF6718L2TR1PbF
DirectFET^® Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
64nC 20nC 9.4nC 67nC 50nC 1.9V
Applicable DirectFET Outline and Substrate Outline 
S1
S2
SB
M2
M4
L6
DirectFET® ISOMETRIC
L4
L6
L8
Description
The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^® packaging to achieve
the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when
application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The
IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
4
ID = 61A
3
2
TJ = 125°C
1
TJ = 25°C
0
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Max.
25
±20
61
52
270
490
530
49
Units
V
A
mJ
A
14.0
12.0 ^{ID= 49A}
10.0
8.0
VDS= 20V
VDS= 13V
6.0
4.0
2.0
0.0
0
20 40 60 80 100 120 140 160 180
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.44mH, R_G = 25Ω, I_AS = 49A.
1
07/27/11