IRF6714MPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Dual Sided Cooling Compatible

PD - 96130A
IRF6714MPbF
IRF6714MTRPbF
DirectFET™ Power MOSFET ‚
l RoHs Compliant and Halogen Free 
Typical values (unless otherwise specified)
l Low Profile (<0.6 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
V_DSS
V_GS
R_DS(on)
R_DS(on)
25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V
l Optimized for High Frequency Switching 
Q_{g tot}
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
29nC
Q_gd
8.3nC
Q_gs2
4.1nC
Q_rr
36nC
Q_oss V_gs(th)
23nC 1.9V
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
Single Pulse Avalanche Energy
I_AR
Avalanche Current
Max.
25
±20
29
23
166
234
175
23
Units
V
A
mJ
A
5
4
ID = 29A
3
2
TJ = 125°C
1
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
Notes:
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14
12 ^{ID= 23A}
10
VDS= 20V
VDS= 13V
8
6
4
2
0
0 10 20 30 40 50 60 70 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.651mH, R_G = 25Ω, I_AS = 23A.
1
04/29/09