IRF6710S2TRPBF Datasheet, PDF (1/10 Pages) International Rectifier – DirectFET Power MOSFET

PD - 97124D
IRF6710S2TRPbF
IRF6710S2TR1PbF
l RoHS Compliant Containing No Lead and Halogen Free

DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
V_DSS
V_GS
R_DS(on)
R_DS(on)
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques 
8.8nC 3.0nC 1.3nC 8.0nC 4.4nC 1.8V
l 100% Rg tested
Applicable DirectFET Outline and Substrate Outline 
S1
DirectFET™ ISOMETRIC
S1
S2
SB
M2
M4
L4
L6
L8
Description
The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6710S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6710S2TRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
Drain-to-Source Voltage
25
V
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
±20
12
10
A
37
100
24
mJ
10
A
20
12
ID = 12A
ID= 10A
10
VDS= 20V
VDS= 13V
15
8
10
TJ = 125°C
5
0
2.0
TJ = 25°C
4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
4
2
0
0
4
8 12 16 20 24
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.49mH, R_G = 25Ω, I_AS = 10A.
1
03/16/10