IRF6691TR1PBF Datasheet, PDF (1/10 Pages) International Rectifier – RoHs Compliant

PROVISIONAL
PD - 97204
IRF6691PbF
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
IRF6691TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@ 4.5V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
47nC 15nC 4.4nC 26nC 30nC 2.0V
MT
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6691PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr
of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal
for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of micropro-
cessors. The IRF6691PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET
sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
Drain-to-Source Voltage
20
V
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, VGS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
±12
32
26
A
180 j
260
230
mJ
26
A
10
9
ID = 32A
8
7
6
5
4
3
TJ = 125°C
2
1
TJ = 25°C
0
2 3 4 5 6 7 8 9 10
6.0
5.0 ^{ID= 17A}
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0
10
20
30
40
50
60
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.72mH, R_G = 25Ω, I_AS = 26A.
1
05/18/06