IRF6691 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET plus Schottky Diode

PD - 95867A
IRF6691
HEXFET^® Power MOSFET plus Schottky Diode
l Application Specific MOSFETs
l Integrates Monolithic Trench Schottky Diode
l Ideal for CPU Core DC-DC Converters
V_DSS
20V
l Low Conduction Losses
l Low Reverse Recovery Losses
l Low Switching Losses
l Low Reverse Recovery Charge and Low Vf
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
R_DS(on) max Qg(typ.)
2.5mΩ@V_GS = 4.5V
47nC
1.8mΩ@V_GS = 10V
MT
DirectFET™ ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6691 combines IR’s industry leading DirectFET package technology with the latest monolithic die technology,
which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal
resistance by 80%.
The IRF6691 is characterized with reduced on resistance (R_DS(on)), reverse recovery charge (Q_rr) and source to drain
voltage (V_SD) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high
Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of proces-
sors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous
MOSFET sockets operating in 12 volt buss converters.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
g Power Dissipation
g Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
Parameter
fj Junction-to-Ambient
gj Junction-to-Ambient
hj Junction-to-Ambient
ij Junction-to-Case
Junction-to-PCB Mounted
Notes  through ˆ are on page 10
Max.
20
±12
180
32
26
260
2.8
1.8
89
0.022
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
V
A
W
W/°C
°C
Units
°C/W
www.irf.com
1
11/3/04