IRF6678 Datasheet, PDF (1/9 Pages) International Rectifier – DirectFET Power MOSFET

PD - 96979B
IRF6678
DirectFET™ Power MOSFET
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
43nC 15nC 4.0nC 46nC 28nC 1.8V
Optimized for for SyncFET Socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with Existing Surface Mount Techniques
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6678 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET^TM packaging to achieve the lowest
on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6678 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6678 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R_DS(on) and gate charge to minimize losses in the SyncFET socket.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
I_DM
Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
I_AR
Avalanche Current
Max.
30
±20
30
24
150
240
210
24
Units
V
A
mJ
A
20
6.0
15
ID = 29A
5.0 ^{ID= 23A}
4.0
VDS= 24V
VDS= 15V
10
3.0
5
TJ = 125°C
0
TJ = 25°C
0 1 2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
2.0
1.0
0.0
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage
Starting T_J = 25°C, L = 0.75mH, R_G = 25Ω, I_AS = 23A.
Surface mounted on 1 in. square Cu board, steady state.
T_C measured with thermocouple mounted to top (Drain) of part.
1
04/18/05