IRF6668 Datasheet, PDF (1/9 Pages) International Rectifier – DirectFET Power MOSFET

PD - 97044A
IRF6668
DirectFET™ Power MOSFET ‚
l RoHS compliant containing no lead or bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
Q_{g tot} Q_gd
80V max ±20V max 12mΩ@ 10V 22nC 7.8nC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
DirectFET™
ISOMETRIC
Description
The IRF6668 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET^TM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI
input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DC-
DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance
isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
I_S @ T_C = 25°C
I_S @ T_C = 70°C
I_SM
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
e Pulsed Drain Current
f Continuous Source Current (Body Diode)
f Continuous Source Current (Body Diode)
e Pulsed Source Current (Body Diode)
Max.
80
±20
55
44
170
81
52
170
Units
V
A
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Repetitive rating; pulse width limited by max. junction temperature.
„ T_C measured with thermocouple mounted to top (Drain) of part.
www.irf.com
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11/4/05