IRF66651PBF Datasheet, PDF (1/10 Pages) International Rectifier – Latest MOSFET Silicon technology

PD - 97230A
IRF6665PbF
DIGITAL AUDIO MOSFET
IRF6665TRPbF
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low R_DS(on) for improved efficiency
• Low Q_g for better THD and improved efficiency
• Low Q_rr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 100W per channel into 8Ω with no heatsink Š
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
Key Parameters
V_DS
100
V
R_DS(on) typ. @ V_GS = 10V 53
m:
Q_g typ.
8.7 nC
R_G(int) typ.
1.9
SH
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6665PbF device utilizes DirectFET^TM packaging technology. DirectFET^TM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET^TM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFET^TM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
P_D @T_C = 25°C
P_D @T_A = 25°C
P_D @T_A = 70°C
Maximum Power Dissipation
e Power Dissipation
e Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
100
± 20
19
4.2
3.4
34
42
2.2
1.4
0.017
-40 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R_θJA
ek Junction-to-Ambient
R_θJA
hk Junction-to-Ambient
R_θJA
ik Junction-to-Ambient
R_θJC
jk Junction-to-Case
R_θJ-PCB
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Typ.
–––
12.5
20
–––
1.4
Max.
58
–––
–––
3.0
–––
Units
°C/W
1
08/25/06