IRF6662 Datasheet, PDF (1/9 Pages) International Rectifier – DirectFet Power MOSFET Typical values (unless otherwise specified)

Lead and Bromide Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
PD - 97039
IRF6662
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
100V max ±20V max 17.5mΩ@ 10V
Q_{g tot}
Q_gd
V_gs(th)
22nC
6.8nC
3.9V
MZ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MZ
Description
The IRF6662 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6662 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
I_DM
Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
I_AR
Avalanche Current
Max.
100
±20
8.3
6.6
47
66
39
4.9
Units
V
A
mJ
A
100
ID = 4.9A
80
60
40
TJ = 125°C
20
TJ = 25°C
0
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
12.0
10.0 ^{ID= 4.9A} VDS= 80V
8.0
VDS= 50V
VDS= 20V
6.0
4.0
2.0
0.0
0
5
10
15
20
25
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs.
Gate-to-Source Voltage
T_C measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T_J = 25°C, L = 3.2mH, R_G = 25Ω, I_AS = 4.9A.
1
08/05/05