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IRF6655TR1 Datasheet, PDF (1/11 Pages) International Rectifier – RoHS compliant containing no lead or bromide | |||
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PD - 96926D
l RoHS compliant containing no lead or bromide Â
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible Â
l Ultra Low Package Inductance
l Optimized for High Frequency Switching Â
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Ideal for Control FET sockets in 36V â 75V in
Synchronous Buck applications
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques Â
IRF6655
DirectFETÂ Power MOSFET Â
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max 53mâ¦@ 10V
Qg tot
Qgd
Vgs(th)
8.7nC 2.8nC
3.9V
SH
DirectFETÂ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)Â
SQ
SX
ST
SH
MQ
MX
MT
MN
Description
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in
non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V â 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
h Continuous Drain Current, VGS @ 10V
h Continuous Drain Current, VGS @ 10V
k Continuous Drain Current, VGS @ 10V
e Pulsed Drain Current
f Single Pulse Avalanche Energy
Ãe Avalanche Current
100
V
±20
4.2
3.4
A
19
34
11
mJ
5.0
A
200
180
ID = 5.0A
160
140
120
100
TJ = 125°C
80
60
40
20
TJ = 25°C
0
4
6
8 10 12 14 16 18
12.0
10.0
ID= 5.0A
VDS= 80V
VDS= 50V
8.0
VDS= 20V
6.0
4.0
2.0
0.0
0
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET MOSFETs
 Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
Fig 2. Typical On-Resistance Vs. Gate Voltage
 Starting TJ = 25°C, L = 0.89mH, RG = 25â¦, IAS = 5.0A.
 Surface mounted on 1 in. square Cu board, steady state.
 TC measured with thermocouple mounted to top (Drain) of part.
1
11/16/05
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