IRF6648PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Ideal for 24V input Primary Side Forward Converters

l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Optimized for Synchronous Rectification for
5V to 12V outputs
l Low Conduction Losses
l Ideal for 24V input Primary Side Forward Converters
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97225A
IRF6648PbF
IRF6648TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
60V max ±20V max
5.5mΩ@ 10V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
36nC 14nC 2.7nC 37nC 21nC 4.0V
MN
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6648PbF is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as
a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal
performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this
device ideal for high performance.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
E_AS
I_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
60
V
±20
86
69
A
260
47
mJ
34
A
60
12.0
50
ID = 17A
10.0 ^{ID= 17A}
VDS= 48V
40
8.0
VDS= 30V
30
6.0
20
10
0
4
TJ = 25°C
6
8
TJ = 125°C
10
12
14
16
VGS, Gate -to -Source Voltage (V)
4.0
2.0
0.0
0
5 10 15 20 25 30 35 40
QG, Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.082mH, R_G = 25Ω, I_AS = 34A.
1
08/24/06