IRF6646TR1PBF Datasheet, PDF (1/10 Pages) International Rectifier – Ideal for High Performance Isolated Converter Primary Switch Socket

PD - 97224A
IRF6646PbF
IRF6646TRPbF
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
DirectFET™ Power MOSFET ‚
V_DSS
80V max
Typical values (unless otherwise specified)
V_GS
R_DS(on)
±20V max
7.6mΩ@ 10V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
36nC 12nC 2.0nC 48nC 18nC 3.8V
MN
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MN
Description
The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6646PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V to 60V ETSI input
voltage range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced
total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for
system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
Max.
80
±20
12
9.6
68
96
230
7.2
Units
V
A
mJ
A
0.05
ID = 7.2A
0.04
0.03
0.02
0.01
0
4
TJ = 25°C
6
8
TJ = 125°C
10
12
14
16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
12.0
10.0 ^{ID= 7.2A}
8.0
VDS= 40V
VDS= 16V
6.0
4.0
2.0
0.0
0
10
20
30
40
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source
Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 8.8mH, R_G = 25Ω, I_AS = 7.2A.
1
08/24/06