IRF6645 Datasheet, PDF (1/9 Pages) International Rectifier – DirectFET Power MOSFET Typical calues (unless otherwise specified)

l RoHs Compliant Containing No Lead and Bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 
PD - 97006
IRF6645
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
100V max ±20V max 28mΩ@ 10V
Q_{g tot}
Q_gd
V_gs(th)
14nC
4.8nC
4.0V
SJ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET™ ISOMETRIC
SH
SJ
SP
MZ
MN
Description
The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
100
V
±20
5.7
4.5
A
25
45
29
mJ
3.4
A
80
12
70
ID = 3.4A
ID= 3.4A
10
VDS= 80V
VDS= 50V
60
8
TJ = 125°C
50
6
40
4
30
TJ = 25°C
2
20
4
6
8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
0
0
4
8
12
16
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 5.0mH, R_G = 25Ω, I_AS = 3.4A.
1
8/5/05