IRF6636 Datasheet, PDF (1/9 Pages) International Rectifier – Low Resistance and Low Charge Along With Ultra Low Package Inductance to Reduce

PD - 96977B
IRF6636
DirectFET™ Power MOSFET
RoHS compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V
Ideal for CPU Core DC-DC Converters
Optimized for for Control FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
ST
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6636 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6636 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
I_DM
Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
I_AR
Avalanche Current
Max.
20
±20
18
15
81
140
28
14
Units
V
A
mJ
A
20
ID = 18A
15
10
TJ = 125°C
5
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
6.0
5.0 ^{ID= 14A VDS= 16V}
4.0
VDS= 10V
3.0
2.0
1.0
0.0
0
10
20
30
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Starting T_J = 25°C, L = 0.27mH, R_G = 25Ω, I_AS = 14A.
Surface mounted on 1 in. square Cu board, steady state.
T_C measured with thermocouple mounted to top (Drain) of part.
1
06/13/05