IRF6635 Datasheet, PDF (1/9 Pages) International Rectifier – DirectFET Power MOSFET

PD - 96981B
IRF6635
DirectFET™ Power MOSFET
RoHs compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 1.3mΩ@ 10V 1.8mΩ@ 4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
47nC 17nC 4.7nC 48nC 29nC 1.8V
Ideal for CPU Core DC-DC Converters
Optimized for for SyncFET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package induc-
tance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high
efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635 has
been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
I_DM
Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
I_AR
Avalanche Current
Max.
30
±20
32
25
180
250
200
25
Units
V
A
mJ
A
10
6.0
8
ID = 32A
5.0 ^{ID= 25A}
VDS= 24V
VDS= 15V
4.0
6
3.0
4
TJ = 125°C
2.0
2
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
1.0
0.0
0
10
20
30
40
50
60
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Starting T_J = 25°C, L = 0.63mH, R_G = 25Ω, I_AS = 25A.
Surface mounted on 1 in. square Cu board, steady state.
T_C measured with thermocouple mounted to top (Drain) of part.
1
06/02/05