IRF6633APBF Datasheet, PDF (1/9 Pages) International Rectifier – RoHS Compliant

PD - 97122A
IRF6633APbF
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
IRF6633ATRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
11nC 3.9nC 1.7nC 33nC 8.5nC 1.8V
MU
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MU
DirectFET™ ISOMETRIC
Description
The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633APbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6633APbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
20
V
±20
16
13
A
69
130
65
mJ
13
A
20
ID = 16A
15
10
TJ = 125°C
5
TJ = 25°C
0
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
12
ID= 13A
10
8
VDS= 16V
VDS= 10V
6
4
2
0
0
5 10 15 20 25 30
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.77mH, R_G = 25Ω, I_AS = 13A.
1
3/13/08