IRF6631PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Low Switching and Conduction Losses

PD - 97217
IRF6631PbF
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Switching and Conduction Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
IRF6631TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 6.0mΩ@ 10V 8.3mΩ@ 4.5V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
12nC 4.4nC 1.1nC 10nC 7.3nC 1.8V
SQ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6631PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that
are critical in synchronous buck converter’s CtrlFET sockets.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
20
ID = 13A
15
10
TJ = 125°C
5
TJ = 25°C
0
3
4
5
6
7
8
9 10
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Max.
30
±20
13
10
57
100
13
10
Units
V
A
mJ
A
12.0
10.0 ^{ID= 10A}
8.0
VDS= 24V
VDS= 15V
6.0
4.0
2.0
0.0
0
5
10
15
20
25
30
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.24mH, R_G = 25Ω, I_AS = 10A.
1
05/29/06