IRF6631 Datasheet, PDF (1/9 Pages) International Rectifier – DirectFET Power MOSFET

l RoHS compliant containing no lead or bromide 
l Low Profile (<0.6 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET applications 
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
PD - 97183
IRF6631
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 6.0mΩ@ 10V 8.3mΩ@ 4.5V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
12nC 4.4nC 1.1nC 10nC 7.3nC 1.8V
SQ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6631 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6631 has been optimized for parameters that are critical in synchronous buck including Rds(on) and
gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
20
ID = 13A
15
10
TJ = 125°C
5
TJ = 25°C
0
3
4
5
6
7
8
9 10
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Max.
30
±20
13
10
57
100
13
10
Units
V
A
mJ
A
12.0
10.0 ^{ID= 10A}
8.0
VDS= 24V
VDS= 15V
6.0
4.0
2.0
0.0
0
5
10
15
20
25
30
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.24mH, R_G = 25Ω, I_AS = 10A.
1
02/09/06