IRF6626TR1 Datasheet, PDF (1/10 Pages) International Rectifier – RoHS compliant containing no lead or bromide

PD - 96976D
IRF6626
l RoHS compliant containing no lead or bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
l Optimized for both Sync. FET and some Control FET
applications 
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
19nC 6.7nC 1.6nC 5.4nC 13nC 1.8V
ST
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6626 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
h Continuous Drain Current, V_GS @ 10V
h Continuous Drain Current, V_GS @ 10V
k Continuous Drain Current, V_GS @ 10V
e Pulsed Drain Current
f Single Pulse Avalanche Energy
Ãe Avalanche Current
Max.
30
±20
16
13
72
130
24
13
Units
V
A
mJ
A
15
6.0
ID = 16A
5.0 ^{ID= 13A VDS= 24V}
10
TJ = 125°C
4.0
VDS= 15V
3.0
5
2.0
TJ = 25°C
1.0
0
3
4
5
6
7
8
0.0
0
10
20
30
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET MOSFETs
ƒ Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage
„ Starting T_J = 25°C, L = 0.29mH, R_G = 25Ω, I_AS = 13A.
† Surface mounted on 1 in. square Cu board, steady state.
‰ T_C measured with thermocouple mounted to top (Drain) of part.
1
11/17/05