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| IRF6623TR1 Datasheet, PDF (1/9 Pages) International Rectifier – Application Specific MOSFETs | |||
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l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with Existing Surface Mount Techniques
PD - 95824C
IRF6623
VDSS
20V
HEXFET® Power MOSFET
RDS(on) max Qg(typ.)
5.7mâ¦@VGS = 10V
11nC
9.7mâ¦@VGS = 4.5V
ST
DirectFETÂ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF6623 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6623 has been optimized for parameters that are
critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the
control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
20
V
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Gate-to-Source Voltage
i Continuous Drain Current, VGS @ 10V
Ãf Continuous Drain Current, VGS @ 10V
f Continuous Drain Current, VGS @ 10V
 Pulsed Drain Current
i Power Dissipation
f Power Dissipation
f Power Dissipation
d Single Pulse Avalanche Energy
ÃÂ Avalanche Current
±20
55
16
A
13
120
42
1.4
W
2.1
43
mJ
40
A
Linear Derating Factor
0.017
W/°C
TJ
Operating Junction and
-40 to + 150
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
RθJA
fj Junction-to-Ambient
RθJA
gj Junction-to-Ambient
RθJA
hj Junction-to-Ambient
RθJC
ij Junction-to-Case
Typ.
âââ
12.5
20
âââ
Max.
58
âââ
âââ
3.0
Units
°C/W
RθJ-PCB
Junction-to-PCB Mounted
1.0
âââ
Notes  through  are on page 2
www.irf.com
1
12/21/05
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