 English |
|
|
|
|
|
|
|
| IRF6620PBF Datasheet, PDF (1/9 Pages) International Rectifier – DirectFETPower MOSFET | |||
| |||
|
PD - 97092
l RoHS Compliant Â
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible Â
l Compatible with existing Surface Mount Techniques Â
IRF6620PbF
IRF6620TRPbF
DirectFETÂ Power MOSFET Â
VDSS RDS(on) max Qg(typ.)
20V 2.7mâ¦@VGS = 10V 28nC
3.6mâ¦@VGS = 4.5V
MX
DirectFETÂ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6620PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6620PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620PbF offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 70°C
PD @TA = 25°C
EAS
IAR
Gate-to-Source Voltage
k Continuous Drain Current, VGS @ 10V
Ãh Continuous Drain Current, VGS @ 10V
h Continuous Drain Current, VGS @ 10V
e Pulsed Drain Current
k Power Dissipation
h Power Dissipation
h Power Dissipation
f Single Pulse Avalanche Energy
Ãg Avalanche Current
Linear Derating Factor
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
hl Junction-to-Ambient
il Junction-to-Ambient
jl Junction-to-Ambient
kl Junction-to-Case
Junction-to-PCB Mounted
Max.
20
±20
150
27
22
220
89
1.8
2.8
39
22
0.017
-40 to + 150
Typ.
âââ
12.5
20
âââ
1.0
Max.
45
âââ
âââ
1.4
âââ
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
Notes  through  are on page 2
www.irf.com
1
5/11/06
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese