IRF6619PBF Datasheet, PDF (1/10 Pages) International Rectifier – DirectFET Power MOSFET

PD - 97084
IRF6619PbF
IRF6619TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
V_DSS
V_GS
R_DS(on)
R_DS(on)
20V max ±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
38nC 13nC 3.5nC 18nC 22nC 2.0V
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6619PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6619PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619PbF offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
Drain-to-Source Voltage
20
V
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
fà Continuous Drain Current, V_GS @ 10V (Package Limited)
±20
30
24
150
A
I_DM
E_{AS (Thermally limited)}
I_AR
E_AR
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
g Repetitive Avalanche Energy
240
240
mJ
See Fig. 14, 15, 17a, 17b,
A
mJ
6.0
12
5.0
ID = 30A
ID= 16A
10
VDS= 16V
VDS= 10V
8
4.0
TJ = 125°C
6
3.0
4
2.0
TJ = 25°C
1.0
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
2
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Limited by T_Jmax, starting T_J = 25°C, L = 0.86mH, R_G = 25Ω, I_AS =
24A, V_GS =10V. Part not recommended for use above this value.
1
5/3/06