IRF6619 Datasheet, PDF (1/9 Pages) International Rectifier – DirectFET Power MOSFET

PD - 96917
IRF6619
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching above 1MHz 
V_DSS
20V max
Q_{g tot}
V_GS
R_DS(on)
R_DS(on)
±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V
Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
l Ideal for CPU Core DC-DC Converters
38nC 13nC 3.5nC 18nC 22nC 2.0V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 
MX
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high
Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
Drain-to-Source Voltage
20
V
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
Gate-to-Source Voltage
h Continuous Drain Current, V_GS @ 10V
h Continuous Drain Current, V_GS @ 10V
kà Continuous Drain Current, V_GS @ 10V (Package Limited)
±20
30
24
150
A
I_DM
E_{AS (Thermally limited)}
I_AR
E_AR
e Pulsed Drain Current
f Single Pulse Avalanche Energy
Ãe Avalanche Current
e Repetitive Avalanche Energy
240
240
mJ
See Fig. 14, 15, 17a, 17b,
A
mJ
6.0
12
5.0
ID = 30A
ID= 16A
10
VDS= 16V
VDS= 10V
8
4.0
TJ = 125°C
6
3.0
4
Notes:
2.0
TJ = 25°C
1.0
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
10.0
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
2
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ Limited by T_Jmax, starting T_J = 25°C, L = 0.86mH, R_G = 25Ω, I_AS =
24A, V_GS =10V. Part not recommended for use above this value.
† Surface mounted on 1 in. square Cu board, steady state.
‰ T_C measured with thermocouple mounted to top (Drain) of part.
1
2/10/05