IRF6618 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD - 94726D
IRF6618/IRF6618TR1
HEXFET^® Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
V_DSS
30V
R_DS(on) max
2.2mΩ@V_GS = 10V
3.4mΩ@V_GS = 4.5V
Qg
43 nC
MT
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Avalanche Characteristics
E_AS
I_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
fj ^Parameter
Junction-to-Ambient
g Junction-to-Ambient
h Junction-to-Ambient
i Junction-to-Case
Junction-to-PCB Mounted
Notes  through ˆ are on page 9
www.irf.com
Max.
30
±20
170
30
24
240
2.8
1.8
89
0.022
-40 to + 150
Typ.
–––
–––
Typ.
–––
12.5
20
–––
1.0
Max.
210
24
Max.
45
–––
–––
1.4
–––
Units
V
A
W
W/°C
°C
Units
mJ
A
Units
°C/W
1
11/3/04