IRF6614 Datasheet, PDF (1/9 Pages) International Rectifier – DirectFET Power MOSFET

PD -96907A
IRF6614
DirectFET™ Power MOSFET ‚
l Application Specific MOSFETs
l Lead and Bromide Free 
l Low Profile (<0.7 mm)
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V
l Dual Sided Cooling Compatible 
Q_{g tot}
l Ultra Low Package Inductance
19nC
l Optimized for High Frequency Switching above 1MHz 
Q_gd
6.0nC
Q_gs2
1.4nC
Q_rr
5.5nC
Q_oss V_gs(th)
9.5nC 1.8V
l Ideal for CPU Core and Telecom Synchronous
Rectification in DC-DC Converters
l Optimized for Control FET socket of Sync. Buck Converter
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 
ST
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal
resistance by 80%.
The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera-
tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous
buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
Drain-to-Source Voltage
40
V
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
h Continuous Drain Current, V_GS @ 10V
h Continuous Drain Current, V_GS @ 10V
k Continuous Drain Current, V_GS @ 10V
e Pulsed Drain Current
f Single Pulse Avalanche Energy
Ãe Avalanche Current
±20
12.7
10.1
A
55
102
22
mJ
10.2
A
20
12
ID = 12.7A
ID= 10.2A
10
VDS= 32V
VDS= 20V
16
8
12
TJ = 125°C
6
4
8
TJ = 25°C
2
4
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET MOSFETs
ƒ Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
0
0
10
20
30
40
50
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ Starting T_J = 25°C, L = 0.43mH, R_G = 25Ω, I_AS = 10.2A.
† Surface mounted on 1 in. square Cu board, steady state.
‰ T_C measured with thermocouple mounted to top (Drain) of part.
1
11/8/04