IRF6613 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

l Application Specific MOSFETs
l Ideal for Synchronous Rectification in Isolated
DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
PD - 95881
IRF6613
V_DSS
40V
HEXFET^® Power MOSFET
R_DS(on) max
3.4mΩ@V_GS = 10V
4.1mΩ@V_GS = 4.5V
Qg(typ.)
42nC
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET™ ISOMETRIC
Description
The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-
nous FET applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
I_AR
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
Power Dissipation
g Power Dissipation
g Power Dissipation
d Single Pulse Avalanche Energy
Ù Avalanche Current
fà Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
R_θJA
R_θJA
R_θJC
fj Junction-to-Ambient
gj Junction-to-Ambient
hj Junction-to-Ambient
ij Junction-to-Case
R_θJ-PCB
Junction-to-PCB Mounted
Max.
40
±20
150
23
18
180
89
2.8
1.8
200
18
0.022
-40 to + 150
Units
V
A
W
mJ
A
W/°C
°C
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Notes  through ˆ are on page 2
www.irf.com
1
8/18/04