IRF66121PBF Datasheet, PDF (1/10 Pages) International Rectifier – RoHs Compliant

RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
PD - 97215
IRF6612PbF
IRF661TRPbF
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 2.5mΩ@ 10V 3.4mΩ@ 4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
30nC 10nC 2.9nC 8.1nC 18nC 1.8V
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
MX
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
10
9
ID = 24A
8
7
6
TJ = 125°C
5
4
3
2
TJ = 25°C
1
0
2 3 4 5 6 7 8 9 10
Max.
30
±20
136
24
19
190
37
19
6.0
5.0 ^{ID= 19A}
4.0
VDS = 24V
VDS = 15V
3.0
2.0
1.0
0.0
0
10
20
Units
V
A
mJ
A
30
40
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
T_C measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T_J = 25°C, L = 0.20mH, R_G = 25Ω, I_AS = 19A.
1
05/29/06