IRF6610 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM

Lead and Bromide Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET
application
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
PD - 97012
IRF6610
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
20V max ±20V max 5.2mΩ@ 10V 8.2mΩ@ 4.5V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
11nC 3.6nC 1.3nC 6.4nC 5.9nC 2.1V
SQ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6610 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 70°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V
I_DM
Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
I_AR
Avalanche Current
Max.
20
±20
15
12
66
120
13
12
Units
V
A
mJ
A
30
25
ID = 15A
20
15
10
TJ = 125°C
5
TJ = 25°C
0
3
4
5
6
7
8
9 10
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
5.0 ^{ID= 12A}
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0
2 4 6 8 10 12 14 16
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
T_C measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T_J = 25°C, L = 0.18mH, R_G = 25Ω, I_AS = 12A.
1
05/25/05