IRF6609PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Ideal for CPU Core DC-DC Converters

PD - 97091A
IRF6609PbF
IRF6609TRPbF
l RoHS Compliant 
DirectFET™ Power MOSFET ‚
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
V_DSS
20V
R_DS(on) max
2.0mΩ@V_GS = 10V
2.6mΩ@V_GS = 4.5V
Qg
46nC
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6609PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6609PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609PbF offers
particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
k Continuous Drain Current, V_GS @ 10V
Ãh Continuous Drain Current, V_GS @ 10V
h Continuous Drain Current, V_GS @ 10V
e Pulsed Drain Current
k Power Dissipation
h Power Dissipation
h Power Dissipation
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
20
±20
150
31
25
250
89
1.8
2.8
0.022
-40 to + 150
V
A
W
W/°C
°C
Parameter
R_θJA
hl Junction-to-Ambient
R_θJA
il Junction-to-Ambient
R_θJA
jl Junction-to-Ambient
R_θJC
kl Junction-to-Case
R_θJ-PCB
Junction-to-PCB Mounted
Notes  through Š are on page 10
www.irf.com
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
1
7/3/06